ZnTe and ZnSe have potential applications in many research areas, high-quality ZnTe and ZnSe were synthesized with deposition rate (10-15nm/min) at 200 nm thickness. The deposition films proceeding glass substrate and Si wafer and annealed at100K annealing temperature were active to assess film properties and applications as optoelectronic devise (solar cell). The central determination of that work was a comparative study amid two important materials in addition an advance in the photoelectric properties. X-ray diffraction analysis showed that polycrystalline for two simples film highest sharp peak corresponding to (111) planes, and have direct energy gap in optical measurements. Hall measurements yielded different majority carrier concentration and an increase of carrier mobility value for ZnTe samples. The current –voltage characteristics of the fabricated solar cells were measured. Fill factors approaching 0.445 and energy conversion efficiencies as high as 4% were obtained for ZnTe.

Zn (Te, Se), Morphology, Thin Films, Optical Properties.